On 7 June 2009, LayTec welcomed more than 70 users and guests at its 11th in-situ seminar held in conjunction with the European Workshop on MOVPE in Ulm (Germany).
Five of LayTec customers presented …
On 7 June 2009, LayTec welcomed more than 70 users and guests at its 11th in-situ seminar held in conjunction with the European Workshop on MOVPE in Ulm (Germany). Five of LayTec customers presented in-situ measurement data: Dandan Zhu (University of Cambridge, UK) held a talk on insitu curvature and full-wafer temperature profile measurements for GaN growth on 6-inch Si substrates. Arne Knauer (Ferdinand-Braun-Institute Berlin, Germany) reported on feed back in-situ temperature control for reproducible growth of InGaN-MQWs. Emilio Gini and Olivier Ostinelli (both of ETH Zurich, Switzerland) shared their experience with EpiRASTT sensor for the growth of DHBTs and HEMTs. Last but not least, Alice Hospodkov (Academy of Sciences, Czech Republic) spoke on the RAS control of InAs/GaAs quantum dots. The seminar was finished with the introduction of new developments from LayTec. LayTec“s next in-situ seminar will be held during the ICNS in Jeju, Korea on 18 October 2009. Those who would like to attend the seminar can contact info@laytec.de.